In order to describe the Radio Frequency (RF) power amplifier with memory effect more quickly and accurately, a new X-parameter power amplifier modeling method was proposed based on the traditional X-parameter model combined with the memory effect and load-pulling of the power amplifier. Firstly,the load reflection coefficient was introduced into the new scheme. Secondly,the two-memory path model was used to extract the nonlinear function to represent the memory effect instead of the kernel function. Three variables including amplitude, load reflection coefficient and frequency were regarded as output signals to build the new Feed-Forward (FF) structure. In the end, the step signal was used instead of the original two-tone signal to simplify the model extraction method and improve the feasibility of model extraction. By using the proposed new X-parameter modeling program to model power amplifier, the simulation results of the power amplifier CGH40045F data showed that compared with the traditional X-parameter model, FF structure X-parameter model and FeedBack (FB) structure X-parameters model, the relative error was reduced; compared with the FF model and the FB model, the simulation time was reduced by 4.08 s and 1.64 s, respectively. The results prove that the model modeled by the proposed mehtod can characterize the amplifier with non-linear memory effect more quickly and effectively